Modern technique for the production and measurement of Makyoh imagesHIBINO, K; YAMAUCHI, M; KATOH, M et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 433-436, issn 0022-0248Conference Paper

Raman microprobe analysis of GaAs wafersJIMENEZ, J; GONZALEZ, M. A; MARTIN, B et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 54-60, issn 0022-0248, 7 p.Conference Paper

Remote contact LBIC imaging of defects in semiconductorsBAJAJ, J; TENNANT, W. E.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 170-178, issn 0022-0248, 9 p.Conference Paper

Surface defects in GaAs wafer processesMATSUSHITA, H; ISHIDA, M; KIKAWA, J et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 448-455, issn 0022-0248, 8 p.Conference Paper

Reverse contrast imaging in GaAsMOHADES-KASSAI, A; BROZEL, M. R.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 303-310, issn 0022-0248Conference Paper

Characterization of semiconductors by photoluminescence mapping at room temperatureTAJIMA, M.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 1-7, issn 0022-0248, 7 p.Conference Paper

Microtomography of semiconductor crystals in the EBIC modeBONDARENKO, I. E; LIKHAREV, S. K; RAU, E. I et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 197-199, issn 0022-0248, 3 p.Conference Paper

Origin of microscopic inhomogeneities in bulk gallium arsenideMOLVA, E; BUNOD, P; CHABLI, A et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 91-101, issn 0022-0248, 11 p.Conference Paper

Characterization of polished surfaces by MakyohKUGIMIYA, K.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 461-468, issn 0022-0248, 8 p.Conference Paper

Mathematical morphology applied to integrated circuit inspectionVITRIA, J; VILLANUEVA, J. J.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 407-412, issn 0022-0248Conference Paper

Anti-phase boundaries of GaAs on SiITOH, Y; MORI, H; YAMAGUCHI, M et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 363-366, issn 0022-0248, 4 p.Conference Paper

High resolution and sensitivity infrared tomographyFILLARD, J. P; MONTGOMERY, P. C; GALL, P et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 109-115, issn 0022-0248Conference Paper

Influence of In content on defects of LPE GaAs epilayersYANG, B. H; WANG, Z. G; HE, H. J et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 371-379, issn 0022-0248, 9 p.Conference Paper

Application of elastic IR light scattering for investigation of large-scale electrically active defects in semiconductorsVORONKOV, V. V; ZABOLOTSKIY, S. E; KALINUSHKIN, V. P et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 126-130, issn 0022-0248, 5 p.Conference Paper

Application of picosecond time resolved photoluminescence mapping for the characterization of semi-insulating GaAs wafersKATSUMATA, T; IMAGAWA, H; WATANABE, M et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 14-20, issn 0022-0248, 7 p.Conference Paper

Cathodoluminescence imaging of semiconducting diamond formed by plasma CVDYOKOTA, Y; KAWARADA, H; JING SHENG MA et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 65-70, issn 0022-0248, 6 p.Conference Paper

Characterization of mirror-polished silicon wafers by Makyoh methodTOKURA, S; FUJINO, N; NINOMIYA, M et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 437-442, issn 0022-0248, 6 p.Conference Paper

Evaluation of directly bonded silicon wafer interface by the magic mirror methodOKABAYASHI, O; SHIROTORI, H; SAKURAZAWA, H et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 456-460, issn 0022-0248, 5 p.Conference Paper

High resolution X-ray diffraction studies of semiconductor superlatticesBARNETT, S. J.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 335-343, issn 0022-0248, 9 p.Conference Paper

Mapping evaluation of damage effect on electrical properties of GaAs Schottky contactsSHIOJIMA, K; OKUMURA, T.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 234-242, issn 0022-0248, 9 p.Conference Paper

Spatial distribution of donors in silicon implanted iron and iron-gallium doped semi-insulating indium phosphideFAVENNEC, P. N; L'HARIDON, H; COQUILLE, R et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 226-233, issn 0022-0248, 8 p.Conference Paper

Surface characterization of semi-insulting GaAs wafers by room temperature photoluminescence mappingTOBA, R; TAJIMA, M.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 28-37, issn 0022-0248, 10 p.Conference Paper

Two-dimensional image detection of luminescence and transport properties of GaAsMORI, Y; NAKAMURA, M; SAKACHI, Y et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 8-13, issn 0022-0248, 6 p.Conference Paper

Submicron optical sectioning microscopy : a particular inverse problem solution adapted to epilayer defect analysisFILLARD, J. P; MONTGOMERY, P. C; GALL, P et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 120-125, issn 0022-0248Conference Paper

A line-scan system to assess homogeneity of [EL2] in heat-treated LEC SI GaAsCLARK, S; BROZEL, M. R; STIRLAND, D. J et al.Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 102-108, issn 0022-0248, 7 p.Conference Paper